Germanium-tin (Ge1-xSnx) p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) were fabricated using a strained Ge0.985Sn0.015 thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer.The Ge buffer was deposited using a two-step chemical vapor deposition growth technique.The high quality Ge0.985Sn0.015 layer was grown by solid source molecular beam epitaxy.Ge0.985Sn0.015 pMOS-FETs with Si surface passivation,TaN/HfO2 gate stack,and nickel stanogermanide [Ni(Ge1-xSnx)] source/drain were fabricated on the grown substrate.The device achieves an effective hole mobility of 182cm2/V·s at an inversion carrier density of 1 × 1013 cm-2.