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合成了高稳定性蓝光主体材料9,10-二萘蒽(ADN),研究材料纯化对合成材料光电性能的影响。为进一步分析材料经升华提纯对有机电致发光器件性能的影响,以提纯前后ADN为发光层,以NPB为空穴传输层,分别制作双层器件Ⅰ(提纯前)和器件Ⅱ(提纯后),器件结构为ITO(100nm)/NPB(40nm)/ADN(30nm)/Alq3(20nm)/LiF(1nm)/Al(100nm),结果表明提纯后材料PL(Photolum inescence)光谱蓝移了2nm,半峰全宽54.2nm,与提纯前一致;杂质影响载流子注入效率和迁移率,对器件光电性能有显著影响,纯化前后器件最大电流效率由1.5cd/A上升至2.5cd/A;器件Ⅱ色纯度有较大提高,CIE色坐标由器件Ⅰ(0.15,0.10)移至(0.15,0.06)。实验结果表明材料提纯是优化器件性能的有效手段之一。
Synthesis of highly stable blue host material 9,10-naphthalene anthracene (ADN), the study of material purification on the photoelectric properties of synthetic materials. In order to further analyze the effect of sublimation and purification on the performance of organic electroluminescent devices, two kinds of devices (before purification) and device (after purification) were fabricated by using ADN as the light-emitting layer and NPB as the hole-transporting layer before and after purification, (100nm) / NPB (40nm) / ADN (30nm) / Alq3 (20nm) / LiF (1nm) / Al (100nm). The results show that the PL (Photoluminescence) The full width at half maximum (FWHM) of 54.2 nm is consistent with that before purification. Impurity affects the carrier injection efficiency and mobility and has a significant effect on the optoelectronic properties of the device. The maximum current efficiency increases from 1.5 cd / A to 2.5 cd / A before and after purification. Ⅱ color purity has greatly improved, CIE color coordinates from the device Ⅰ (0.15,0.10) to (0.15,0.06). Experimental results show that material purification is one of the most effective ways to optimize device performance.