Helicon plasma sputtering of Fe/Si multilayer followed by thermal annealing in Ar atmosphere was used to fabricate β-FeSi_2 films. [Fe 0.5nm/Si 1.6nm]_ 120 multilayer was deposited on Si(100) substrate and then the samples were annealed at 900℃ for 2h or at 9001000℃ for 10s. Annealed samples were characterized by X-ray diffractometry(XRD), Rutherford backscattering spectroscopy, scanning electron microscopy and optical absorption measurement. (202)/(220) oriented β-FeSi_2 films are fabricated from the multilayer according to XRD patterns. It is found that there is a very small redistribution of Fe and Si components in the films during the thermal annealing, so that a good stoichiometry of FeSi_2 can be obtained. It is also revealed by scanning electron microscopy that multilayer technology can result in a smooth surface for β-FeSi_2 films. Optical absorption spectra demonstrate that the films have a direct band gap of 0.9eV at room temperature. Helicon plasma sputtering of Fe / Si multilayer followed by thermal annealing in Ar atmosphere was used to fabricate β-FeSi_2 films. [Fe 0.5nm / Si 1.6nm] _120 multilayer was deposited on Si (100) substrate and then the samples Annealed samples were characterized by X-ray diffractometry (XRD), Rutherford backscattering spectroscopy, scanning electron microscopy and optical absorption measurement. (202) were annealed at 900 ° C for 2h or at 9001000 ° C for 10s. / (220) oriented β-FeSi_2 films are fabricated from the multilayer according to XRD patterns. It is found that there is a very small redistribution of Fe and Si components in the films during the thermal annealing, so that a good stoichiometry of FeSi_2 can It was also revealed by scanning electron microscopy that multilayer technology can result in a smooth surface for β-FeSi_2 films. Optical absorption spectra demonstrate that the films have a direct band gap of 0.9eV at room temperature.