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针对大功率器件散热瓶颈问题,基于GaN功率芯片,利用有限元分析方法开展了芯片近结区热特性模拟方法的研究。建立了芯片近结区散热能力仿真评估的三维理论模型,系统地研究了不同的初始条件、边界条件、晶格热效应及结构理论假设等因素对仿真精度的影响,分析了理论建模因素对计算结果的影响的原因。同时采用红外热成像仪对不同功率下的GaN芯片结温进行测试验证,模拟计算的结果和测试值的偏差在10%之内,表明合理建模的热仿真技术可有效评估器件散热能力。
Aiming at the bottleneck of heat dissipation in high-power devices, a simulation method for the thermal characteristics of the near junction region of a chip is developed based on the GaN power chip by using the finite element analysis method. The three-dimensional theoretical model of thermal evaluation of chip near junction is established. The influence of different initial conditions, boundary conditions, thermal effects of lattice and structural theory assumptions on the simulation accuracy is systematically studied. The influences of theoretical modeling factors on calculation The reason for the effect of the result. At the same time, infrared thermal imager was used to verify the junction temperature of GaN chips with different power. The deviation between the calculated results and the measured values was less than 10%, indicating that the reasonably modeled thermal simulation technique can effectively evaluate the heat dissipation capability of the device.