【摘 要】
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The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector,which has been commonly attributed to the presence of e
【机 构】
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State Key Laboratory of Luminescence and Applications,Changchan Institute of Optics,Fine Mechanics a
论文部分内容阅读
The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector,which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption pro-cesses.However,the detailed mechanism is still not very clear.Herein,the properties ofZnO QDs and their photodetectors with different amounts of oxygen vacancy (Vo) defects controlled by hydrogen peroxide (H2O2) solution treatment have been investigated.After H2O2 solution treatment,Vo concentration of ZnO QDs decreased.The H2O2 solution-treated device has a higher photocurrent and a lower dark current.Meanwhile,with the increase in Vo concentration of ZnO QDs,the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate.More inter-estingly,the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of VO defects.The findings in this work clarify that the surface Vo defects of ZnO QDs could enhance the photoresponse speed,which is helpful for sensor designing.
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