808nm大功率半导体激光器阵列的优化设计

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采用激射波长为808 nm的GaAs/AlGaAs梯度折射率波导分别限制单量子阱结构外延片,制备了沟道深度不同的半导体激光器阵列,并对载流子分布进行理论分析和模拟。理论和实验结果表明:引入脊形台面和隔离沟道后,激光器阵列的输出功率、电光转换效率、斜率效率和光谱特性均有显著提高。随着沟道的加深,对电流侧向扩散的限制作用增强,从而提高了阵列性能。 A GaAs / AlGaAs gradient refractive index waveguide with a lasing wavelength of 808 nm was used to confine the single quantum well structure epitaxial wafer respectively. Semiconductor laser arrays with different channel depths were fabricated, and the carrier distribution was theoretically analyzed and simulated. Theoretical and experimental results show that the output power, the electro-optical conversion efficiency, the slope efficiency and the spectral characteristics of the laser array are greatly improved after the introduction of the ridge mesa and the isolation trench. With the deepening of the channel, the limiting effect on the current side diffusion is enhanced, thereby improving the array performance.
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