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东京都市大学(原武藏工业大学)综合研究所开发出了可在室温(300K)且电流注入的条件下发光的Si类半导体元件。发光时的Q值高达1560。为室温下Si类半导体的全球最高值,完全可作为LED使用。在以Si类半导体实现光传输的“Si光子”技术领域,包括光敏元件和导光路
Tokyo Metropolitan University (Formerly Musashino University) The Institute of General Semiconductor developed a Si-based semiconductor device that emits light at room temperature (300K) with current injection. The luminous Q value of up to 1560. It is the highest value of Si in the world at room temperature and can be used as LED. In the field of “Si photons” for optical transmission in Si-based semiconductors, a photosensor and a light guide circuit