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设计了Ka波段GaN功率高电子迁移率晶体管(HEMT)外延材料及器件结构,采用Al N插入层提高了二维电子气(2DEG)浓度。采用场板结构提高了器件击穿电压。采用T型栅工艺实现了细栅制作,提高了器件高频输出功率增益。采用钝化工艺抑制了电流崩塌,提高了输出功率。采用通孔工艺减小源极寄生电阻,通过优化钝化层厚度减小了寄生电容,提高了器件增益。基于国产SiC外延材料及0.15μm GaN HEMT工艺进行了器件流片,最终研制成功Ka波段GaN HEMT功率器件。对栅宽300μm器件在29 GHz下进行了微波测试,工作栅源电压为-2.2 V,源漏电压为20 V,输入功率为21 dBm时,器件输出功率为30 dBm,功率增益为9 dB,功率附加效率约为43%,功率密度达到3.3 W/mm。
The Ka-band GaN high-power electron-mobility transistor (HEMT) epitaxial material and device structure are designed, and the 2DEG concentration is increased by using AlN intercalation layer. Using the field plate structure to improve the device breakdown voltage. The use of T-gate technology to achieve a thin grid production, improve the device high-frequency output power gain. The passivation process suppresses the current collapse and improves the output power. Through-hole process to reduce the source parasitic resistance, by optimizing the thickness of the passivation layer to reduce the parasitic capacitance, increased device gain. Based on the homemade SiC epitaxial material and 0.15μm GaN HEMT process, the device flow sheet was finally fabricated and successfully developed the Ka-band GaN HEMT power device. The gate width of 300μm device was tested at 29 GHz under microwave conditions. The operating gate-source voltage was -2.2 V, the source-drain voltage was 20 V, the output power was 30 dBm and the power gain was 9 dB when the input power was 21 dBm. Power added efficiency of about 43%, the power density of 3.3 W / mm.