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利用 3UCVD技术在p型 4H SiC上制备了栅氧化层 ,其正的氧化物电荷密度仅有 1 6× 1 0 1 1 cm- 2 ,这一结果优于传统的热氧化工艺 .为检验氧化层质量所做的高频C V测试采用了正面接地的新的测试结构 ,克服了常规测试结构的缺点
Using 3UCVD technology, a gate oxide layer was fabricated on p-type 4H SiC with a positive oxide charge density of only 16 × 10 11 cm -2, which is superior to the conventional thermal oxidation process. Quality The high-frequency CV test uses a new test structure that is grounded to the front, overcoming the shortcomings of conventional test structures