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业已证明,砷化镓场效应晶体管的失效常常发生在较小的制造过程中造成的缺陷的部位上。可用扫描电镜和光学检查去除有这些缺陷的器件。失效常常可用能量脉冲来探测,能量脉冲能使材料从局部区域冲出。由正或负脉冲所引起的失效有不同的特性:栅上的正脉冲倾向于引起紧靠栅键合压点处或栅电阻大的区的失效;负脉冲倾向于引起制造过程中造成的缺陷的失效。该损伤可能不至于使器件电性能变坏,但将严重地降低其寿命。
It has been demonstrated that failure of gallium arsenide field effect transistors often occurs at the site of defects resulting from smaller manufacturing processes. Available scanning electron microscopy and optical inspection to remove these defects of the device. Failure can often be detected by a pulse of energy, which pulses the material out of the local area. Failures caused by positive or negative pulses have different characteristics: positive pulses on the gate tend to cause failure close to the area where the gate bond is pressed or where the gate resistance is large; negative pulses tend to cause defects during the manufacturing process The failure. This damage may not degrade the electrical performance of the device, but will seriously reduce its lifetime.