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利用薄膜声体波谐振器(FBAR),结合GaAs异质结双极晶体管(HBT)工艺研制了一款小型化低相噪FBAR压控振荡器。将振荡三极管、偏置电路及隔离缓冲放大器集成到一个GaAs单片微波集成电路(MMIC)中,振荡管基极接薄膜电感形成负阻,发射极通过键合线与FBAR进行互连。将GaAs单片集成电路的大信号模型作为一个非线性器件,用探针台测试FBAR谐振器的单端口S参数,导入ADS软件进行谐波平衡法仿真和优化;通过电路制作和调试,达到了预期设计目标。该FBAR压控振荡器中心频率为2.44 GHz,调谐带宽15 MHz,单边带相位噪声达-110 dBc/Hz@10 kHz,与同频段同轴介质压控振荡器指标相当,但其尺寸更小,仅为5 mm×7 mm×2.35 mm。
A miniaturized, low-phase-noise, FBAR voltage-controlled oscillator has been developed using a thin film bulk acoustic resonator (FBAR) in combination with a GaAs heterojunction bipolar transistor (HBT) process. Oscillating triode, bias circuit and isolation buffer amplifier integrated into a GaAs monolithic microwave integrated circuit (MMIC), the oscillation tube base connected to the film inductance to form a negative resistance, the emitter through the bonding wire and the FBAR interconnection. The large signal model of GaAs monolithic integrated circuit is used as a nonlinear device. The probe port is used to test the single-port S-parameter of the FBAR resonator and the ADS software is used to simulate and optimize the harmonic balance method. Through circuit fabrication and debugging, Expected design goals. The FBAR VCO has a center frequency of 2.44 GHz, a tuning bandwidth of 15 MHz and single-sideband phase noise of -110 dBc / Hz at 10 kHz, which is comparable to the same band coaxial medium voltage-controlled oscillator but smaller in size , Only 5 mm × 7 mm × 2.35 mm.