论文部分内容阅读
设计并制作了一种新型双极测试结构,即在常规横向pnp双极晶体管基区表面氧化层上淀积一栅电极,通过扫描栅极所加电压,获得漏极(集电极)电流随栅极电压的变化特性,利用中带电压法分离栅控横向pnp双极晶体管在辐照过程中感生的氧化物陷阱电荷和界面陷阱电荷.本文对设计的晶体管测试结构和采用的测试方法做了具体介绍.
A novel bipolar test structure is designed and fabricated by depositing a gate electrode on the surface oxide layer on the base of a conventional lateral pnp bipolar transistor. The drain (collector) current is obtained by scanning the voltage applied to the gate. The characteristics of the voltage changes, the use of voltage in the isolated gate-controlled lateral pnp bipolar transistor induces during the irradiation of the oxide trap charge and interface trap charge.This paper on the design of the transistor test structure and test methods used to do Specific introduction.