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本文研究了沿{110}硅平面扩散的 P—型扩散层压阻效应的非线性。导出了包括较高级应力项并能定量处理压阻效应的表达式。发现第三级应力项足以给出说明该效应的良好近似值。使用具有10~(18)～10~(19)表面浓度扩散层的悬臂梁,用实验的方法确定出表达式系数。在张力和压缩力的情况下,悬臂梁纵轴与电流方向垂直时的非线性大于其与电流方向平行时的非线性。使用这一新的表达式,证实了试验用硅压阻式压力传感器样品非线性的数字分析结果与实验结果相一致。
In this paper, we study the nonlinearity of the piezoresistive effect of P-type diffusion layers diffused along the {110} silicon plane. The expression that includes higher-level stress terms and that can handle the piezoresistive effect quantitatively has been derived. The third level of stress was found to be sufficient to give a good approximation of the effect. Using cantilever beams with diffusion layers of 10 ~ (18) ~ 10 ~ (19) surface concentration, the expression coefficients were determined experimentally. In the case of tension and compression forces, the nonlinearity of the cantilever beam when its longitudinal axis is perpendicular to the current direction is greater than its non-linearity when it is parallel to the current direction. Using this new expression, it was confirmed that the numerical analysis of the non-linearity of the tested silicon piezoresistive pressure sensor samples is consistent with the experimental results.