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研究了在GaAs(001)衬底上外延生长GaAs、AlGaAs材料过程中反射高能电子衍射(RHEED)的各级条纹及其强度随生长过程的变化.通过对各级条纹强度振荡周期和位相的分析,应用二维成核层状生长模型解释了实验结果:生长表面形貌的周期性变化导致了RHEED各级条纹及其强度的周期性变化.
In this paper, we study the variation of the stripe pattern and the intensity of the reflected high energy electron diffraction (RHEED) during the epitaxial growth of GaAs and AlGaAs on the GaAs (001) substrate.According to the analysis of the periodicity and phase , The two-dimensional nucleation layered growth model was used to explain the experimental results. The periodic variation of the morphology of the growth surface caused periodic changes in the streaks and their intensities at all RHEED levels.