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本文应用MOCVD技术制备出高质量的GaAs,AlGaAs外延材料以及GaAs/AlGaAs异质结和多量子阱结构.首次成功地用该技术生长了微波HBT全结构材料,并获得了较高性能的器件结果:300K时直流增益(β)为15~40,77K时为60,截止频率大于10GHz,最高振荡频率为5.5GHz.
In this paper, high quality GaAs, AlGaAs epilayers and GaAs / AlGaAs heterojunction and multiple quantum well structures are fabricated by MOCVD technique, and the microwave HBT structure material has been successfully grown by this technique for the first time and high performance device results have been obtained : 300K DC gain (β) of 15 ~ 40,77 K when the cut-off frequency is greater than 10GHz, the maximum oscillation frequency of 5.5GHz.