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Cu(In,Ga)Se2 (CIGS) thin films were prepared by directly sputtering Cu(In,Ga)Se2 quaternary target consisting of Cu:In:Ga:Se 25:17.5:7.5:50 at%. The composition and structure of CIGS layers have been investigated after annealing at 550 ℃ under vacuum and a Se-containing atmosphere. The results show that recrystallization of the CIGS thin film occurs and a chalcopyrite structure with a preferred orientation in the (112) direction was obtained. The CIGS thin film annealed under vacuum exhibits a loss of a portion of Se, while the film annealed under Se-containing atmosphere reveals compensation of Se. Several solar cells with three different absorber thicknesses were fabricated using a soda lime glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid stack structure. The highest conversion efficiency of 9.65% with an open circuit voltage of 452.42 mV, short circuit current density of 32.16 mA cm2 and fill factor of 66.32% was obtained on a 0.755 cm2 cell area.
Cu (In, Ga) Se2 (CIGS) thin films were prepared by sputtering Si (In, Ga) Se2 quaternary target consisting of Cu: In: Ga: Se 25: 17.5: 7.5: 50 at%. The composition and structure of The results show that recrystallization of the CIGS thin film occurs and a chalcopyrite structure with a preferred orientation in the (112) direction was obtained. The CIGS thin films have been investigated after annealing at 550 ° C. under vacuum and a Se-containing atmosphere. film annealed under vacuum exhibits a loss of a portion of Se, while the film annealed under Se-containing atmosphere reveals compensation of Se. Several solar cells with fabricated using a soda lime glass / Mo / CIGS / CdS / i The highest conversion efficiency of 9.65% with an open circuit voltage of 452.42 mV, short circuit current density of 32.16 mA cm2 and fill factor of 66.32% was obtained on a 0.755 cm2 cell area .