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用直流磁控反应溅射技术制备了综合性能优良的ZnO:Al(ZAO)薄膜.X光衍射(XRD)、光电子能谱(XPS)和Auger电子能谱(AES)等分析结果表明,适量的铝掺杂和氧流量可有效地控制Al_2O_3相的生成.铝在薄膜表面的存在形式单一,并且Zn,O,Al各元素纵向分布均匀.理论与实验研究表明,对于高度简并的ZAO半导体薄膜,在温度较低时,离化杂质散射占主导地位;温度较高时,晶格振动散射将成为主要的散射机制;晶界散射仅当晶粒尺寸较小(与电子的平均自由程相当)时才起作用.此外,优化工艺参数可获得低电阻率(～5×10~(-4)Ωcm)的ZAO薄膜.在可见光区,其透射率>80％;在近中红外光区,其反射率>60％.
The ZnO: Al (ZAO) thin films with good properties were prepared by DC magnetron reactive sputtering.The results of X-ray diffraction (XRD), photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) Al doping and oxygen flow can effectively control the formation of Al 2 O 3 phase.Al exists on the surface of the film in the form of a single, and Zn, O, Al vertical distribution of each element. Theoretical and experimental studies have shown that for the highly degenerate ZAO semiconductor film , Scattering of ionization dominates at low temperature; lattice vibration scattering will be the main scattering mechanism at higher temperatures; and the grain boundary scattering only occurs when the grain size is small (equivalent to the mean free path of electrons) In addition, ZAO thin films with low resistivity (~ 5 × 10 -4 Ωcm) can be obtained by optimizing the process parameters.In the visible region, the transmittance is more than 80%. In the near-mid-infrared region, Reflectivity> 60%.