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综述了硅基Ⅲ-Ⅴ族纳米线与异质结制备技术的研究进展。针对基于Ⅲ-Ⅴ族纳米线的半导体器件,重点介绍了硅基Ⅲ-Ⅴ族纳米线场效应晶体管的研究现状,详细介绍了硅基Ⅲ-Ⅴ族纳米线场效应晶体管和隧穿场效应晶体管的制备流程、工艺技术和器件的电学性能,并对影响器件电学性能的因素进行了分析。概括介绍了硅基Ⅲ-Ⅴ族纳米线激光器和硅基Ⅲ-Ⅴ族纳米线太阳电池的研究成果,基于硅衬底的Ⅲ-Ⅴ族纳米线太阳电池为低成本、高效能的太阳电池领域开辟了新途径。研究结果表明,采用硅基Ⅲ-Ⅴ族纳米线制备的场效应晶体管、激光器及太阳电池等半导体器件相对于Si,Ge等传统半导体材料制备的器件有着巨大的优势,在未来集成电路技术中具有越来越大的影响力。
In this paper, the research progress of the preparation of Si-based III-V nanowires and heterostructures was reviewed. Aiming at the group Ⅲ-Ⅴ nanowire-based semiconductor devices, the research status of silicon-based III-V family of nanowire field-effect transistors is emphatically introduced. The effects of silicon-based III-V family of nanowire field-effect transistors and tunneling field effect transistors The preparation process, the technology and the electrical properties of the device, and the factors that affect the electrical properties of the device were analyzed. The research results on silicon-based III-V nanowire lasers and silicon-based III-V nanowire solar cells are summarized. The silicon substrate-based III-V nanowire solar cells are the field of low cost and high performance solar cell Opened up new ways. The results show that semiconductor devices such as field-effect transistors, lasers and solar cells fabricated with Si-based III-V nanowires have great advantages over those fabricated with traditional semiconductor materials such as Si and Ge. In the future, integrated circuit technology Increasing influence.