论文部分内容阅读
对ＩｎＧａＡｓ／ＩｎＧａＡｓＰ多量子阱材料，根据温度场方程计算了两种激光作用下多量子阱混迭技术（ＰＡＩＤ及ＰＬＤ）的横向空间选择性，得到ＰＡＩＤ在一般情况下的横向空间选择性为１００μｍ量级，而ＰＬＤ的理论极限为１００μｍ。同时分析了混迭多量子阱材料的能带结构与组分扩散长度的关系，从理论上提出了低温量子阱材料与扩散长度之间的关系曲线。
For InGaAs / InGaAsP multiple quantum well materials, the lateral space selectivity of the multiple quantum well hybridization technique (PAID and PLD) under two kinds of lasers is calculated according to the temperature field equation. The horizontal space selectivity of the PAID under normal conditions is 100 μm Order of magnitude, while the theoretical limit of PLD is 100 μm. At the same time, the relationship between the energy band structure and the diffusion length of the components in the mixed multiple quantum well material is analyzed, and the relationship curve between the diffusion quantum length and the material of the low temperature quantum well is theoretically proposed.