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The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO_2/ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state(PRS) are observed and ascribed to the electron trapping and the oxygen transport processes. For a resistive switching(RS) device, the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device. With the illumination being off, the conductance slowly decays,which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity. The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices.
The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO / TiO 2 / ITO structure. Driven by the electrical and optical stimuli independently, the conductivity relaxation behaviors of the pristine resistive state (PRS) are observed and Ascribed to the electron trapping and the oxygen transport processes. For a resistive switching (RS) device, the conductance change change under optical illumination is about two orders of magnitude smaller than the conductance change change corresponding to the variation of background current due to the emergence of a The number in oxygen vacancies in the RS device. With the illumination being off, the conductance of slowly decays, which suggests that the oxygen diffusion process dominates the conductance relaxation. The difference in conductance relaxation between the bulk and edge devices that that oxygen exchange plays a critical role in the relaxation process of conductivity. The syne rgistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices.