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在冲击电压下 ,通过在真空中对采用和未采用化学腐蚀表面处理的硅半导体的实验表明 ,试品的表面状况对其泄漏电流和沿面闪络特性有着很大的影响 ,在沿面闪络之前 ,未经处理试品的泄漏电流表现为欧姆性电流 ,而表面处理过的试品表现为空间电荷限制电流特性 ;同时两类试品表面的放电通道也表现出不同的特征。提出了一个新的模型来描述半导体材料沿面闪络的发展过程 ,即由焦耳热效应诱导的电流细丝现象而发展成最终的闪络 ,并认为这是一个发生在半导体表层内的过程 ,在靠近真空的侧面这一表层厚度约为 2 μm。
At impact voltage, experiments on silicon semiconductors with and without chemical etching in vacuum show that the surface condition of the test specimen has a great influence on the leakage current and creeping flashover characteristics. Before creeping flashover , The leakage current of the untreated sample showed an ohmic current, while the surface-treated sample showed a space charge-limited current characteristic. Meanwhile, the discharge channels on the two types of test samples also showed different characteristics. A new model is proposed to describe the development of surface flashover of semiconductor materials. That is, the current filament induced by the Joule effect evolves into the final flashover, which is considered as a process occurring in the semiconductor surface. The thickness of the skin on the side of the vacuum is about 2 μm.