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本文研究了热压烧结条件对氧化铟锌(IZO)靶材和薄膜晶体管(TFT)性能的影响。以80%:20%(质量分数比)的ZnO和In_2O_3的混合粉体为原料通过热压烧结法制备IZO靶材,以制备的靶材通过磁控溅射制备IZO TFT。X射线衍射(XRD)图谱以及扫描电镜(SEM)图像表明IZO靶材结晶性好,元素分布均匀。烧结温度为850℃时靶材呈现烧结致密化,900℃-60 min条件下In_2O_3的挥发破坏了靶材烧结致密化。提高烧结温度或延长烧结时间加速In向ZnO晶格的扩散以及空位向表面迁移,有利于靶材致密化以及形成InZnO_x晶相。TFT器件表征结果表明低密度和过高密度靶材会恶化薄膜质量,降低器件性能,可见适当高密度的靶材对制备TFT至关重要,最终900℃-90 min条件的靶材所制备的TFT性能最好,迁移率为16.25 cm~2·V~(-1)·s~(-1)。
In this paper, the effects of hot-pressing conditions on the properties of IZO and TFT were investigated. An IZO target material was prepared by hot-pressing sintering method using a mixed powder of ZnO and In_2O_3 of 80%: 20% (mass fraction) as a raw material, and an IZO TFT was prepared by magnetron sputtering using the prepared target. X-ray diffraction (XRD) patterns and scanning electron microscopy (SEM) images show that IZO targets have good crystallinity and uniform elemental distribution. When the sintering temperature is 850 ℃, the target becomes densified. The volatilization of In_2O_3 under 900 ℃ -60 min destroys the target densification. Increasing the sintering temperature or prolonging the sintering time accelerates the diffusion of In into the ZnO lattice as well as the vacancy migration to the surface, which facilitates the densification of the target material and the formation of the InZnOx crystal phase. TFT device characterization results show that low-density and high-density target will deteriorate the quality of the film, reducing device performance, we can see the appropriate high-density target is crucial for the preparation of TFT, the final preparation of 900 ℃ -90 min target conditions TFT The best performance, the mobility of 16.25 cm ~ 2 · V -1 s -1.