通过深入地分析影响金属 -半导体肖特基势垒的各种因素 ,探讨了几种降低肖特基势垒高度的途径 ,其中 ,特别是通过汽相激光诱导化学掺杂技术在金属 -半导体界面上制作一足够薄的高掺杂层 ,可以使肖特基势垒高度得到显著降低。这种技术的应用 ,对在PtSi/Si界面上制作超浅结和在半导体器件中制作良好的欧姆接触提供了广阔的应用前景。 By deeply analyzing various factors that affect the metal-semiconductor Schottky barrier, several approaches to reduce the Schottky barrier height have been discussed. In particular, the gas-phase laser-induced chemical doping technique has been studied at the metal-semiconductor interface Make a sufficiently thin layer of highly doped Schottky barrier height can be significantly reduced. The application of this technology provides a broad application prospect for making ultra-shallow junctions on PtSi / Si interfaces and for making good ohmic contacts in semiconductor devices.