一、前言 钝化是改善器件性能和提高可靠性所不可缺少的手段,也是硅工艺中酌一个重点。在当前发展以MOS为主的大规模(LSI)和超大规模(VLSI)集成电路中,其重要性就更加无可非议。 硅器件的钝化,自有平面器件以来,已有广泛而系统的研究,发表了大量文章,目前不管在理论认识上还是在实际技术上,都达到了可观的水平,成为硅器件继续向超大规模集成电路迈进的一个重要基础。本文就硅器件钝化 I. INTRODUCTION Passivation is an indispensable tool for improving device performance and reliability. It is also a key point in silicon technology. In the current development of MOS-based large-scale (LSI) and very large-scale (VLSI) integrated circuits, its importance even more undeniable. Passivation of silicon devices, since its own planar devices, has been extensive and systematic research, published a large number of articles, regardless of the theoretical knowledge or practical technology, have reached a considerable level, as silicon devices continue to oversized Scale integrated circuit is an important foundation. This article on silicon passivation