采用有效质量理论６带模型，计算了应变层超晶格ＧａＮＡｌＮ（００１）的电子结构，具体计算不同应变状态的价带子能带色散曲线、光吸收曲线。分析了应变状态以及重轻空穴和自旋轨道分裂带相互作用对子带结构的影响。 Using the effective mass theory 6-band model, the electronic structure of the strain-layer superlattice GaNAlN (001) has been calculated, and the dispersion curves and absorption curves of valence band subbands in different strain states have been calculated. The effect of strain state and the interaction of heavy light hole and spin orbit splitting band on the subband structure was analyzed.