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在光电化学光能转换的研究中,由于多种因素在半导体/溶液界面形成了各种性质和作用不同的表面态,在界面的电荷和能量转移中起着重要作用,对光电转换性能产生较大的影响。对于多晶半导体——作为具有实用前景和目前深受重视的光电转换材料,由于存在较多的晶格缺陷和晶粒界面,在表面形成了浓度较高的表面态,这些表面态可作为光生电子空穴的复合中心,是造成多晶材料光电转换效率低于单晶材料的主要原因。因此测量和研究半导体/溶液界面的表面态能量分布,性质及作用对研究光电转换过程的机理,特别是对改善多晶半导体的性能都具有直接的重要意义。
In the research of photoelectrochemical light energy conversion, due to various factors in the semiconductor / solution interface formed by the nature and role of different surface states in the interface charge and energy transfer plays an important role in the photoelectric conversion performance than Big impact For polycrystalline semiconductors - as photoelectric conversion materials of practical utility and currently of great interest, higher concentrations of surface states are formed on the surface due to the presence of more lattice defects and grain boundaries, which can be used as photogenerated The electron-hole recombination center is the main reason that the photoelectric conversion efficiency of the polycrystalline material is lower than that of the single-crystal material. Therefore, measuring and studying the energy distribution, properties and effects of the surface states at the semiconductor / solution interface is of great importance for studying the mechanism of the photoelectric conversion process, especially for improving the performance of the polycrystalline semiconductor.