题目 期自力更生、排除万难、艰苦奋斗、建设三线………………………………………二 工 作 报 告:篚反击右倾翻案风的斗争中硅栅Ⅳ沟道MOSl024位随机存贮器研制成功……一二氧化硅抛光工艺小结………………………………·………………………………|I一、一5千兆赫低噪声晶体管 Topic period self-reliance, eliminate all difficulties, work hard to build three lines ............................................. Second work report: 篚 counterattack right-wing controversy over the wind in the silicon gate IV channel MOSl024 bit random access memory Successfully developed ...... A silicon dioxide polishing process summary