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在一组具有不同厚度表层硅的SOI衬底上异质外延SiC薄膜.Raman测试结果表明,SiC薄膜中的残存应力随着表层硅厚度的减薄而降低.采用力平衡原理和重合位置点阵模型对SiC外延层中的应力释放现象进行了解释.
Heterogeneous epitaxial SiC thin films on a group of SOI substrates with different thickness of surface silicon.The results of Raman test show that the residual stress in SiC thin films decreases with the decrease of surface silicon thickness.By using the principle of force balance and lattice of coincidence positions The model explains the stress release in the SiC epitaxial layer.