2015年2月6日,英飞凌科技股份公司近日推出新型低饱和压降VCE(sat)IGBT。此类IGBT专门针对50Hz至20kHz的低开关频率范围进行了优化。这个范围的开关频率常见于不间断电源(UPS)以及光伏逆变器和逆变焊机中。新L5系列基于TRENCHSTOP5薄晶片技术,使本来就很低的导通损耗因为载流子结构的优化得到了进一步降低。凭借25℃时典型饱和压降(VCE(sat))为1.05 V的傲人成绩,此类新型 February 6, 2015, Infineon Technologies AG has introduced a new low saturation voltage drop VCE (sat) IGBT. Such IGBTs are optimized for low switching frequency ranges from 50Hz to 20kHz. Switching frequency in this range is common in uninterruptible power supplies (UPS) and in photovoltaic inverters and inverter welders. The new L5 series is based on the TRENCHSTOP5 thin-wafer technology, enabling the already low conduction losses to be further reduced by the carrier structure optimization. With a proud record of 1.05 V typical saturation voltage drop (VCE (sat)) at 25 ° C,