一、引言在低噪声 GaAsFET 的发展中,近来已有重大进展。噪声系数不断降低,频率上限不断提高,频率高至 Ka 频段的低噪声 FET 放大器也已实现。然而,高频 FET 尚不能适当地表征,并且对支配着高频工作的器件参数不能很好地了解。本文将提出一种模拟工作的结果以及 Ka 频段 FET 的射频性能。本文也评价和提出了采用液相外延(LPE)、汽相外延(VPE)和离子注入(II)制作的 FET 器件。这三种类型器件 I. INTRODUCTION In the development of low-noise GaAsFETs, significant progress has recently been made. The noise figure continues to decrease, the upper frequency limit continues to increase, and low-noise FET amplifiers with frequencies up to the Ka band have also been implemented. However, high frequency FETs have not been properly characterized and well understood device parameters that dominate high frequency operation. This article will present the results of a simulation and the RF performance of Ka-band FETs. This article also evaluated and proposed FET devices fabricated using liquid phase epitaxy (LPE), vapor phase epitaxy (VPE) and ion implantation (II). These three types of devices