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介绍了一种超低功耗、无片上电阻、无双极型晶体管(BJT)的基于亚阈值CMOS特性的基准电压源,该带隙基准源主要用于低功耗型专用集成电路(ASIC)。采用Oguey电流源结构来减小静态电流,以降低功耗。通过使用工作在线性区的MOS管代替传统结构中的电阻消除迁移率和电流的温度影响,同时减小芯片面积;采用共源共栅电流镜以降低电源电压抑制比和电压调整率。电路基于SMIC 0.18μm CMOS工艺进行仿真。仿真结果表明,在-45~130℃内,温漂系数为29.1×10-6/℃,电源电压范围为0.8~3.3 V时,电压调整率为0.056%,在100 Hz时,电源电压抑制比为-53 d B。电路功耗仅为235 n W,芯片面积为0.01 mm2。
A sub-threshold CMOS-based reference for ultra-low-power, chip-less, bipolar transistors (BJTs) is introduced. The bandgap reference is mainly used for low-power ASICs. Oguey current source structure to reduce the quiescent current to reduce power consumption. By using MOSFETs operating in a linear region instead of resistors in conventional architectures, the temperature effects of mobility and current are eliminated while reducing the chip area. A cascode current mirror is used to reduce the supply voltage rejection ratio and voltage regulation. The circuit is simulated based on the SMIC 0.18μm CMOS process. The simulation results show that the voltage regulation ratio is 0.056% when the temperature coefficient is 29.1 × 10-6 / ℃ and the power supply voltage range is 0.8 ~ 3.3 V at -45 ~ 130 ℃. At 100 Hz, the power supply rejection ratio Is -53 d B. The circuit consumes only 235 nW and has a chip area of 0.01 mm2.