论文部分内容阅读
首次利用MOCVD-LPE混合外延技术在InP衬底上生长了GaAs材料,这种复合材料显示了优良的特性,(400)反射面的双晶X射线衍射回摆曲线半峰宽对4μm厚外延层可低至170弧秒,16K温度光致发光测量中获得了GaAs激子发光和8.4meV的近带边光谱半峰宽。
For the first time, GaAs material was grown on InP substrate by MOCVD-LPE hybrid epitaxy. The composite showed excellent properties. The (400) birefringence of the (400) As low as 170 arcsec, GaAs exciton emission and 8.4 meV near-half-band spectrum full width at half maximum of 16K temperature photoluminescence were obtained.