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采用电子回旋共振(ECR)等离子体刻蚀与机械抛光相结合的方法抛光化学气相沉积(CVD)金刚石,运用扫描电镜、Raman光谱观察、分析了刻蚀与抛光后金刚石的表面形貌和质量变化,并与单纯的机械抛光相比较,研究了等离子体刻蚀对后续机械抛光的影响,结果发现:金刚石经ECR等离子体刻蚀后非晶碳含量有一定程度降低,刻蚀过程在金刚石晶面形成的疏松表面有利于机械抛光,金刚石表面平均粗糙度更加快速降低。对比实验表明等离子体刻蚀对机械抛光前期的抛光效率的增强效果更为明显,在ECR等离子体刻蚀后的金刚石样品经10min机械抛光后粗糙度从7.284下降到1.054μm,而直接机械抛光30min时金刚石的表面粗糙度为1.133μm,在机械抛光的初始阶段,等离子体刻蚀后的机械抛光效率是单纯机械抛光效率的3倍。最终,经过三次重复刻蚀后机械抛光,金刚石表面粗糙度降为0.045μm。
The chemical vapor deposition (CVD) diamond was polished by electron cyclotron resonance (ECR) plasma etching combined with mechanical polishing. The surface morphology and mass change of diamond after etching and polishing were analyzed by SEM and Raman spectroscopy. , And compared with the simple mechanical polishing, the impact of plasma etching on the subsequent mechanical polishing was studied. The results show that the amorphous carbon content of the diamond after ECR plasma etching is reduced to a certain extent. The etching process is performed on the diamond crystal plane The loose surface formed favors mechanical polishing, and the diamond surface average roughness decreases more rapidly. The contrast experiments show that the plasma etching efficiency is more obviously enhanced in the polishing efficiency of the mechanical polishing. The roughness of the diamond samples after ECR plasma etching is reduced from 7.284 to 1.054μm after 10min mechanical polishing, while the direct mechanical polishing is 30min When the diamond surface roughness of 1.133μm, in the initial stage of mechanical polishing, mechanical polishing plasma etching efficiency is simply mechanical polishing efficiency of 3 times. Finally, after three repeated etching and mechanical polishing, the diamond surface roughness decreased to 0.045μm.