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一、概述离子束刻蚀技术是从70年代起随着固体器件向亚微米级线宽方向发展而兴起的一种超精细加工技术,它是利用离子束轰击固体表面时发生溅射效应来剥离加工器件上所需要的几何图形的。离子束刻蚀这种新工艺与机械加工、化学腐蚀、等离子体腐蚀、等离子体溅射等工艺相比较,具有以下特点:(1)对加工材料具有非选择性,任何材料包括导体、半导体、绝缘体都可以刻蚀;(2)具有超精细的加工能力。它能刻蚀加工非常精细的沟槽图形,是属于微米级和亚微米级加工,甚至能刻出0.008μm 的线条。(3)刻蚀的方向性好,分辨率高.
I. Overview Ion beam etching technology is from the 70’s with the solid-state devices to sub-micron line width direction of the rise of a kind of ultra-fine processing technology, which is the use of ion beam bombardment of the solid surface sputtering effect to peel The geometry needed to process the device. Ion Beam Etching This new process has the following characteristics compared to mechanical processing, chemical etching, plasma etching, plasma sputtering, etc. (1) Non-selective processing of materials, any material including conductors, semiconductors, Insulators can be etched; (2) with ultra-fine processing capacity. It is capable of etching very fine trench patterns, which are sub-micron and sub-micron processing and can even score 0.008μm lines. (3) good direction of etching, high resolution.