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The behavior of Si 1- x Ge x /Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si 1- x Ge x layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.
The behavior of Si 1- x Ge x / Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si 1- x Ge x layers at same time. Higher annealing temperature will result in the Propagation of misfit dislocations and then the total destruction of the crystal quality.