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作为第三代宽禁带半导体器件,GaN基HFET功率器件具耐高压、高频、导通电阻小等优良特性,在电力电子器件方面也具有卓越的优势。概述了基于电力电子方面应用的AlGaN/GaN HFET功率器件的研究进展。从器件的结构入手,介绍了AlGaN/GaN HEMT的研究现状,从栅材料的选取以及栅介质层的结构对器件性能的影响着手,对AlGaN/GaN MIS-HFET的研究进行了详细的介绍。分析了场板改善器件击穿特性的原理以及各种场板结构AlGaN/GaNHFET器件的研究进展。论述了实现增强型器件不同的方法。阐述了GaN基HFET功率器件在材料、器件结构、稳定性、工艺等方面所面临的挑战。最后探讨了GaN基HFET功率器件未来的发展趋势。
As a third generation wide bandgap semiconductor device, GaN-based HFET power devices have excellent characteristics such as high voltage resistance, high frequency and small on-resistance, and also have excellent advantages in power electronic devices. The research progress of AlGaN / GaN HFET power devices based on power electronics applications is summarized. The research status of AlGaN / GaN HEMT is introduced from the structure of the device. The research of AlGaN / GaN MIS-HFET is introduced in detail from the selection of gate material and the influence of gate dielectric layer structure on device performance. The principle of the field plate to improve the breakdown characteristics of the device and the research progress of the field plate structure AlGaN / GaNHFET devices are analyzed. Discusses the different ways to implement enhanced devices. The challenges of GaN-based HFET power devices in materials, device structure, stability, process and so on are described. Finally, the future development trend of GaN-based HFET power devices is discussed.