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Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strainmodified interlayers.In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer,many threading dislocations interact and annihilate within about 1 00 nm below the multiple quantum well layer.For multiple-quantum-well layers grown with the AlGaN interlayer,misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density.Besides misfit dislocations,the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface.