论文部分内容阅读
研究了npn型SiGe HBT集电结附近的异质结位置对器件性能的影响.采用Taurus-Medici 2D器件模拟软件,在渐变集电结SiGe HBT的杂质分布不变的情况下,模拟了各种异质结位置时的器件直流增益特性和频率特性.同时比较了处于不同集电结偏压下的直流增益和截止频率.分析发现即使没有出现导带势垒,器件的直流和高频特性仍受SiGe层中性基区边界位置的影响.模拟结果对SiGe HBT的设计和分析都具有实际意义.
The effect of heterojunction position near npn-type SiGe HBT collector junctions on the performance of the device was investigated. The Taurus-Medici 2D device simulation software was used to simulate the impurity distribution of SiGe HBTs. DC gain characteristics and frequency characteristics of the device at the heterojunction position.At the same time, the DC gain and the cut-off frequency at different collector junction bias were compared.It was found that even without the conduction band barrier, the DC and high frequency characteristics of the device were still Affected by the boundary position of neutral base in SiGe layer, the simulation results have practical significance for the design and analysis of SiGe HBT.