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本文首次报导了用InGaAs材料制备的Hall器件。该器件具有输出灵敏度高(比GaAs高50％),功耗小,欧姆接触好以及在较宽的温区(4K到480K)内工作等特点。在4K温度时,可以工作到80kG以上的强磁场。
This article reports for the first time a Hall device made of InGaAs material. The device features high output sensitivity (50% more than GaAs), low power consumption, good ohmic contact, and operation over a wide temperature range (4K to 480K). In 4K temperature, can work to more than 80kG strong magnetic field.