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采用磁控共溅射法在Si片表面镀NiTi膜作为碳纳米管生长的催化剂,制备出表面形貌特殊的碳纳米管薄膜,如“丘状”和“星状”的表面微结构。通过扫描电子显微镜对碳纳米管薄膜的形貌进行表征,采用二极管形式测试了碳纳米管薄膜的场发射性能。实验结果表明,这两种碳纳米管薄膜都具有优异的场发射性能,10μA/cm~2时的开启电场分别仅为1.02 V/μm和1.15 V/μm,在外加电场为2.4 V/μm时的电流密度分别达到4.32 mA/cm~2和6.88 mA/cm~2。通过场发射FN的曲线计算得到的场发射增强因子分别为10113和6840。这两种碳纳米管薄膜优异的场发射性能与其表面的微结构有关。表面的粗糙结构增强了部分碳纳米管的局域电场,易于发射电子。
Magnetron sputtering method was used to deposit NiTi film on Si wafer as a catalyst for the growth of carbon nanotubes to prepare carbon nanotube films with special surface morphology such as “mound” and “star” surface microstructure. The morphology of the carbon nanotube films was characterized by scanning electron microscopy. The field emission properties of the carbon nanotube films were tested using a diode. The experimental results show that both of the carbon nanotube films have excellent field emission performance. The ON electric field at 10μA / cm ~ 2 is only 1.02 V / μm and 1.15 V / μm, respectively. When the applied electric field is 2.4 V / μm The current density reached 4.32 mA / cm ~ 2 and 6.88 mA / cm ~ 2, respectively. The field emission enhancement factors calculated from the field emission FN curves are 10113 and 6840, respectively. The excellent field emission properties of these two carbon nanotube films are related to the microstructure of their surface. The rough surface structure enhances the local electric field of some carbon nanotubes and facilitates the emission of electrons.