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对SiC表面进行传统湿法清洗之后,采用电子回旋共振(ECR)氢等离子体系统在200℃低温条件下对SiC表面进行了氢等离子体处理,对处理前后的SiC样品表面分别做了反射高能电子衍射(RHEED)分析和X射线光电子能谱(XPS)分析。通过RHEED分析发现,经过氢等离子体处理的SiC表面比传统湿法清洗的SiC表面平整度更高,而且实验发现氢等离子体处理SiC表面时间越长,SiC表面平整度越高。通过XPS分析发现,SiC表面氧的含量显著减少,C/C—H化合物被去除,从而显著提高了SiC的抗氧化能力。
After the conventional wet cleaning of the SiC surface, the hydrogen plasma treatment was performed on the SiC surface at a low temperature of 200 ° C by using an electron cyclotron resonance (ECR) hydrogen plasma system, and the surfaces of the SiC samples before and after the treatment were respectively reflected high energy electrons Diffraction (RHEED) analysis and X-ray photoelectron spectroscopy (XPS) analysis. The results of RHEED analysis show that the surface roughness of the plasma treated with hydrogen plasma is higher than that of the conventional wet cleaned SiC, and the longer the hydrogen plasma treated SiC surface, the higher the surface smoothness of SiC. XPS analysis showed that the content of oxygen on the SiC surface was significantly reduced, and the C / C-H compound was removed, thereby significantly improving the oxidation resistance of SiC.