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分析了半导体表面空间电荷层对深亚微米、纳米尺度下半导体微结构间电场的影响，并同宏观尺寸下采用的金属极板公式进行了比较．结果表明：当半导体微结构间距离在１ μｍ 以上时，可以忽略半导体表面空间电荷层对微结构间电场的影响；当半导体微结构间距离缩小到亚微米和数十纳米量级时，空间电荷层对微结构间电场分布的影响逐渐增大，此时分析电场一般不能利用金属极板公式．微结构间电场同金属极板近似公式间的相对误差与半导体材料的介电常数、掺杂浓度等因素有关．
The effect of the space charge layer on the electric field of the semiconducting microstructures at the deep submicron and the nanoscale was analyzed and compared with that of the metal plate under the macroscopic dimension. The results show that when the distance between the semiconductor microstructures is more than 1 μm, the influence of the space charge layer on the electric field can be neglected. When the distance between the semiconductor microstructures shrinks to the order of submicron and tens of nanometers, the space charge The effect of the layer on the electric field distribution between the microstructures is gradually increased. In this case, the analysis of the electric field generally can not utilize the formula of the metal plate. The relative error between the electric field of the microstructure and the approximate formula of the metal plate is related to the dielectric constant, doping concentration and other factors of the semiconductor material.