In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure,asilicon-rich silicon nitride film with tensil estressi
A low specific on-resistance(R on;sp/ SOI NBL TLDMOS(silicon-on-insulator trench LDMOS with an N buried layer) is proposed. It has three features: a thin N buri
In Xishuangbanna,one of China’s most biodiverse regions,landscape has changed dramatically during the past three decades due to the conversion of tropical rain