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In GaN quantum dot is a promising optoelectronic material,which combines the advantages of low-dimensional and wide-gap semiconductors.The growth of In GaN quantum dots is still not mature,especially the growth by metal–organic–vapor phase epitaxy(MOVPE),which is challenge due to the lack of 、itin-situ monitoring tool.In this paper,we reviewed the development of In GaN quantum dot growth by MOVPE,including our work on growth of near-UV,green,and red In GaN quantum dots.In addition,we also introduced the applications of In GaN quantum dots on visible light emitting diodes.
In GaN quantum dots is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of In GaN quantum dots is still not mature, especially the growth by metal-organic-vapor phase epitaxy (MOVPE) , which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of In GaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red In GaN quantum In addition, we also introduced the applications of In GaN quantum dots on visible light emitting diodes.