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采用射频共溅射技术在石英玻璃和硅片衬底上制备出Ge SiO2 复合薄膜 ,然后在真空气氛中进行热处理。利拉曼散射、X射线衍射、UV/VIS/NIR透射和反射谱、变温电导测试等手段对薄膜的光、电特性进行了研究。实验结果表明 ,用热处理的方法可以在薄膜中形成Ge纳米颗粒 ,Ge纳米颗粒的平均尺度约 5 .0nm时 ,薄膜的光学带宽约 1.42ev ,电导激活能的最小值约 0 .43ev。
Ge SiO2 composite films were prepared on quartz glass and silicon substrates by radio frequency co-sputtering technique and then annealed in a vacuum atmosphere. Li-Raman scattering, X-ray diffraction, UV / VIS / NIR transmission and reflection spectra, temperature-dependent conductance measurements and other means were used to study the optical and electrical properties of the films. The experimental results show that Ge nanoparticles can be formed in the thin films by heat treatment. The average optical index of the Ge nanoparticles is about 5.0 nm, the optical bandwidth of the film is about 1.42 eV, and the minimum value of the activation energy is about 0.43 eV.