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不同角度的GaP表面形貌刻蚀主要依赖于刻蚀参数的调节以及光刻胶的形貌,但要得到能够重复的光刻胶形貌是很困难的.研究了如何通过调节感应耦合等离子(ICP)刻蚀仪器本身的参数,而不依赖于不定的光刻胶形貌来得到可重复的表面形貌.通过研究可知,射频功率与腔室压强是影响表面形貌的最重要的两个参数.射频功率越小刻蚀得到的角度越大,腔室压强越大刻蚀得到的角度也越大.通常BCl3等离子体被用来作为GaP的刻蚀气体,但为了维持所需的等离子浓度以及更大的操作压强,Ar被加入刻蚀气体中.
Different angles of GaP surface topography etching mainly depends on the adjustment of the etching parameters and the morphology of the photoresist, but it is very difficult to obtain a repeatable photoresist topography.How to study how to adjust the induced coupling plasma ICP) can be used to etch the instrument itself without relying on indefinite resist topography to obtain repeatable surface topography.It can be seen from the study that RF power and chamber pressure are the two most important factors affecting surface topography The smaller the RF power is, the larger the etching angle is, and the larger the chamber pressure is, the larger the etching angle is. Generally, BCl3 plasma is used as an etching gas for GaP. However, in order to maintain the desired plasma concentration As well as a greater operating pressure, Ar is added to the etching gas.