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利用水平热壁式CVD外延生长技术,在75mm偏向〈1120〉方向4°的(0001)Si-面n型导电衬底上同质外延生长了4H-SiC薄膜.光学显微镜和原子力显微镜测试结果表明外延层表面存在三角形、胡萝卜状等典型的4°偏轴外延缺陷及普遍的台阶形貌.通过优化外延参数,片内浓度均匀性(σ/mean)和厚度均匀性分别达到4.37%和1.81%.
4H-SiC films were homo-epitaxially grown on a (0001) Si-plane n-type conductive substrate with a thickness of 75mm and inclined to <1120> by horizontal hot-wall CVD epitaxial growth technology.The results of optical microscopy and atomic force microscopy The typical 4 ° off-axis epitaxial defects such as triangle and carrot exist on the surface of epitaxial layer, and the typical step-shape of the epitaxial layer is 4.37% and 1.81% respectively by optimizing the epitaxial parameters, .