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通过测量半磁性半导体Ｃｄ＿（１－ｘ）Ｍｎ＿ｘＴｅ晶体在７７～３００Ｋ温度范围的电导率变化，得到了晶体的一个受主深能级约为０．１８ｅｖ左右，并通过分析以及退火后的电导率的测量，认为它可能是由［Ｖ＿（Ｃｄ）￣（２－）Ｄ￣＋］引起的，同时通过ＶａｎｄｅｒＰａｕｌ法，对Ｃｄ＿（１－ｘ）Ｍｎ＿ｘＴｅ晶体进行了室温下的霍耳效应测量，得到了它的一些电学参数。
By measuring the conductivity of Cd_ (1-x) Mn_xTe crystals in the temperature range of 77 ~ 300K, the one-step deep level of the crystal is about 0.18ev, and the conductivity and the conductivity after annealing It is thought that it may be caused by [V Cd (2-) D ~ +] and at the same time, the Hall effect of Cd_ (1-x) Mn_xTe crystals at room temperature is measured by VanderPaul method. Some of its electrical parameters.