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实现了一种可用于单片集成光接收机前端的GaAs基InP/InGaAs HBT。借助超薄低温InP缓冲层在GaAs衬底上生长出了高质量的InP外延层。在此基础上,只利用超薄低温InP缓冲层技术就在半绝缘GaAs衬底上成功制备出了InP/InGaAsHBT,器件的电流截止频率达到4.4GHz,开启电压0.4V,反向击穿电压大于4V,直流放大倍数约为20。该HBT器件和GaAs基长波长、可调谐InP光探测器单片集成为实现适用于WDM光纤通信系统的高性能、集成化光接收机前端提供了一种新的解决方法。
A GaAs-based InP / InGaAs HBT that can be used in the monolithic integrated optical receiver front-end is realized. High-quality InP epitaxial layers have been grown on GaAs substrates using an ultra-thin, low-temperature InP buffer layer. On this basis, the InP / InGaAs HBT is successfully fabricated on semi-insulating GaAs substrate by using the ultra-thin and low-temperature InP buffer layer technology. The current cut-off frequency of the device reaches 4.4 GHz, the turn-on voltage is 0.4V and the reverse breakdown voltage is greater than 4V, DC amplification is about 20. The monolithic integration of HBT devices and GaAs long wavelength, tunable InP photodetectors provides a new solution for implementing high performance, integrated optical receiver front ends for WDM optical fiber communication systems.