综述了近年来碳化硅颗粒(SiCp)和碳化硅晶须(SiCw)增强铝基复合材料的发展,尤其是铝锂基复合材料的发展。SiC/Al复合材料的制造方法有铸造法、粉末冶金法、溅射沉积法等。碳化硅和铝的界面结合良好,由于碳化硅和铝的热膨胀系数相差六倍,因而在生产及热处理过程中收缩差所产生的错配应变会在基体中产生大量位错。人们认为,高密度的位错是SiC/Al强化的主要因素。 In recent years, the development of SiCp and SiCw reinforced Al matrix composites has been reviewed, especially the development of Al-Li matrix composites. The manufacturing method of SiC / Al composites includes casting method, powder metallurgy method and sputtering deposition method. The interface between silicon carbide and aluminum is well bonded. As the thermal expansion coefficients of silicon carbide and aluminum differ sixfold, mismatch strain caused by poor shrinkage during production and heat treatment can generate a large number of dislocations in the matrix. It is believed that the high density of dislocations is a major factor in SiC / Al strengthening.